Datasheet

Philips Semiconductors Product specification
TrenchMOS transistor BUK9575-100A
Logic level FET BUK9675-100A
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
1
Drain-source non-repetitive I
D
= 14.2 A; V
DD
≤ 25 V; - - 100 mJ
unclamped inductive turn-off V
GS
= 5 V; R
GS
= 50 Ω; T
mb
= 25 ˚C
energy
Fig.1. Normalised power dissipation.
PD% = 100⋅P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥ 5 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100 1000
1
10
100
RDS(ON)=VDS/ID
DC
tp =
1us
10us
100us
1ms
10ms
ID/A
VDS/V
0 20 40 60 80 100 120 140 160 180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.01
0.1
1
10
1E-07 1E-05 1E-03 1E-01 1E+01
t/s
Zth/(K/W)
0
0.02
0.05
0.1
0.2
0.5
1 For maximum permissible repetitive avalanche current see fig.18.
October 2000 3 Rev 1.200