Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor BUK9575-100A
Logic level FET BUK9675-100A
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA; 100 - - V
voltage T
j
= -55˚C 89 - - V
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 1 1.5 2.0 V
T
j
= 175˚C 0.5 - - V
T
j
= -55˚C - - 2.3 V
I
DSS
Zero gate voltage drain current V
DS
= 100 V; V
GS
= 0 V; - 0.05 10 µA
T
j
= 175˚C - - 500 µA
I
GSS
Gate source leakage current V
GS
= ±10 V; V
DS
= 0 V - 2 100 nA
R
DS(ON)
Drain-source on-state V
GS
= 5 V; I
D
= 10 A - 60 75 mΩ
resistance T
j
= 175˚C - - 188 mΩ
V
GS
= 10 V; I
D
= 10 A - 55 72 mΩ
V
GS
= 4.5 V; I
D
= 10 A - 61 84 mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 1278 1704 pF
C
oss
Output capacitance - 129 155 pF
C
rss
Feedback capacitance - 88 120 pF
t
d on
Turn-on delay time V
DD
= 30 V; R
load
=1.2Ω; - 13 20 ns
t
r
Turn-on rise time V
GS
= 5 V; R
G
= 10 Ω - 120 168 ns
t
d off
Turn-off delay time - 58 87 ns
t
f
Turn-off fall time - 57 86 ns
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die(SOT404)
L
s
Internal source inductance Measured from source lead to - 7.5 - nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - 23 A
current
I
DRM
Pulsed reverse drain current - - 92 A
V
SD
Diode forward voltage I
F
= 10 A; V
GS
= 0 V - 0.85 1.2 V
I
F
= 23 A; V
GS
= 0 V - 1.1 - V
t
rr
Reverse recovery time I
F
= 23 A; -dI
F
/dt = 100 A/µs; - 63 - ns
Q
rr
Reverse recovery charge V
GS
= -10 V; V
R
= 30 V - 0.22 - µC
October 2000 2 Rev 1.200