Datasheet

Philips Semiconductors Product specification
TrenchMOS transistor BUK9575-100A
Logic level FET BUK9675-100A
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope available in V
DS
Drain-source voltage 100 V
TO220AB and SOT404 . Using I
D
Drain current (DC) 23 A
’trench’ technology which features P
tot
Total power dissipation 99 W
very low on-state resistance. It is T
j
Junction temperature 175 ˚C
intended for use in automotive and R
DS(ON)
Drain-source on-state
general purpose switching resistance V
GS
= 5 V 75 mΩ
applications. V
GS
= 10 V 55 mΩ
PINNING
TO220AB & SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab/mb drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 15 V
I
D
Drain current (DC) T
mb
= 25 ˚C - 23 A
I
D
Drain current (DC) T
mb
= 100 ˚C - 16 A
I
DM
Drain current (pulse peak value) T
mb
= 25 ˚C - 91 A
P
tot
Total power dissipation T
mb
= 25 ˚C - 98 W
T
stg
, T
j
Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.5 K/W
mounting base
R
th j-a
Thermal resistance junction to in free air 60 - K/W
ambient(TO220AB)
R
th j-a
Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient(SOT404) board
1
23
tab
13
mb
2
SOT404
TO220AB
BUK9675-100A
BUK9575-100A
d
g
s
October 2000 1 Rev 1.200