Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DF
Fig.13. Forward bias safe operating area. T
hs
= 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
Fig.14. Forward bias safe operating area. T
hs
= 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
July 1998 5 Rev 1.600