Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.9. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 16 kHz
Fig.10. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.11. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 16 kHz
Fig.12. Normalised power dissipation.
PD% = 100 ⋅ P
D
/P
D 25˚C
= f (T
hs
)
0 1 2 3 4
IB / A
VBESAT / V BU2508DF
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
6A
4.5A
3A
2A
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU2508AX
tp / sec
Zth K/W
1.0E-06 1E-04 1E-02 1E+00
D =
t
p
t
p
T
T
P
t
D
0.1 1 10
IB / A
VCESAT / V BU2508DF
10
1
0.1
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
IC=2A
3A
4.5A
6A
0.1 1 10
IB / A
ts, tf / us BU2508DF
12
11
10
9
8
7
6
5
4
3
2
1
0
IC =
4.5A
3.5A
ts
tf
0.1 1 10
IB / A
Eoff / uJ BU2508DF
1000
100
10
IC = 4.5A
3.5A
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
July 1998 4 Rev 1.600