Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DF
Fig.1. 16kHz Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. 16kHz Switching times test circuit .
Fig.4. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
ICsat
IBend
64us
26us20us
t
t
t
TRANSISTOR
DIODE
0.01 1
IC / A
BU2508DF
100
10
1
0.1 10
Tj = 25 C
Tj = 125 C
5V
h
FE
1V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1 1 10
IC / A
VBESAT / V
BU2508DF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICsat
1mH
12nF
D.U.T.
LB
IBend
-VBB
Rbe
0.1 1 10
IC / A
VCESAT / V
BU2508DF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
IC/IB=
4
5
3
July 1998 3 Rev 1.600