Datasheet

September 1997 2 Rev1.200
NXP Semiconductors Product specification
Three quadrant triacs
high commutation
BTA225 series B
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
foruseincircuits where high staticand BTA225- 500B 600B 800B
dynamic dV/dt and high dI/dt can V
DRM
Repetitive peak off-state 500 600 800 V
occur loads. These devices will voltages
commutate the full rated rms current I
T(RMS)
RMS on-state current 25 25 25 A
at the maximum rated junction I
TSM
Non-repetitive peak on-state 190 190 190 A
temperature, without the aid of a current
snubber.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 600
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 25 A
T
mb
≤ 91 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 190 A
t = 16.7 ms - 209 A
I
2
tI
2
t for fusing t = 10 ms - 180 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 30 A; I
G
= 0.2 A; 100 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.