Datasheet

Philips Semiconductors Product specification
Triacs BTA140 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.0 K/W
junction to mounting base half cycle - - 1.4 K/W
R
th j-a
Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A
T2+ G+ - 6 35 mA
T2+ G- - 10 35 mA
T2- G- - 11 35 mA
T2- G+ - 23 70 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A
T2+ G+ - 8 40 mA
T2+ G- - 30 60 mA
T2- G- - 18 40 mA
T2- G+ - 15 60 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A
T2+ - 7 30 mA
T2- - 12 30 mA
V
T
On-state voltage I
T
= 30 A - 1.3 1.55 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.7 1.5 V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; 100 300 - V/µs
off-state voltage exponential waveform; gate open circuit
dV
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 95 ˚C; I
T(RMS)
= 25 A; - 10 - V/µs
commutating voltage dI
com
/dt = 9 A/ms; gate open circuit
t
gt
Gate controlled turn-on I
TM
= 30 A; V
D
= V
DRM(max)
; I
G
= 0.1 A; - 2 - µs
time dI
G
/dt = 5 A/µs
September 1997 2 Rev 1.200