Datasheet

BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 6 of 13
NXP Semiconductors
BT169 series
Thyristor logic level
6. Characteristics
Table 5. Characteristics
T
j
= 25  C unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 10 mA;
gate open circuit; see Figure 8
-50200A
I
L
latching current V
D
= 12 V; I
GT
= 0.5 mA;
R
GK
=1k; see Figure 10
- 26mA
I
H
holding current V
D
= 12 V; I
GT
= 0.5 mA;
R
GK
=1k; see Figure 11
- 25mA
V
T
on-state voltage I
T
= 1.2 A - 1.25 1.7 V
V
GT
gate trigger voltage I
T
= 10 mA; gate open circuit;
see Figure 7
V
D
= 12 V - 0.5 0.8 V
V
D
= V
DRM(max)
; T
j
= 125 C0.20.3-V
I
D
, I
R
off-state leakage
current
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
;
T
j
= 125 C; R
GK
= 1 k
- 0.05 0.1 mA
Dynamic characteristics
dV
D
/dt critical rate of rise of
off-state voltage
V
DM
= 67 % V
DRM(max)
; T
j
= 125 C;
exponential waveform;
see Figure 12
R
GK
= 1 k 500 800 - V/s
gate open circuit - 25 - V/s
t
gt
gate controlled
turn-on time
I
TM
= 2 A; V
D
= V
DRM(max)
;
I
G
=10mA; dI
G
/dt = 0.1 A/s
-2-s
t
q
circuit commuted
turn-off time
V
D
= 67 % V
DRM(max)
; T
j
= 125 C;
I
TM
= 1.6 A; V
R
= 35 V;
dI
TM
/dt = 30 A/s; dV
D
/dt = 2 V/s;
R
GK
= 1 k
-100-s