TO -92 BT169 series Thyristors logic level Rev. 5 — 30 September 2011 Product data sheet 1. Product profile 1.1 General description Passivated, sensitive gate thyristors in a SOT54 plastic package. 1.2 Features and benefits Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.3 Applications General purpose switching and phase control applications. 1.
BT169 series NXP Semiconductors Thyristor logic level 3. Ordering information Table 2. Ordering information Type number Package BT169B Name Description Version - plastic single-ended leaded (through hole) package; 3 leads SOT54 BT169D BT169G 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
BT169 series NXP Semiconductors Thyristor logic level 001aab446 0.8 a= 1.57 Ptot (W) 77 Tlead(max) (°C) 1.9 0.6 89 2.2 2.8 0.4 101 4 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.2 113 α 125 0.6 0 0 0.1 0.2 0.3 0.4 0.5 IT(AV) (A) a = form factor = IT(RMS)/IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values.
BT169 series NXP Semiconductors Thyristor logic level 001aab497 103 IT ITSM (A) 102 ITSM t tp Tj(init) = 25 °C max 10 1 10−5 10−4 10−3 10−2 tp (s) tp 10 ms. Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values. 001aab449 2 001aab450 1 IT(RMS) (A) 0.8 IT(RMS) (A) (1) 1.5 0.6 1 0.4 0.5 0.2 0 10−2 10−1 1 10 surge duration (s) f = 50 Hz; Tlead 83 C. Product data sheet 0 50 100 150 Tlead (°C) (1) Tlead = 83 C.
BT169 series NXP Semiconductors Thyristor logic level 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-lead) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to lead - - 60 K/W thermal resistance from junction to printed-circuit board mounted; ambient lead length = 4 mm - 150 - K/W 001aab451 102 Zth(j-lead) (K/W) 10 1 δ= P tp T 10−1 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6.
BT169 series NXP Semiconductors Thyristor logic level 6. Characteristics Table 5. Characteristics Tj = 25 C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; gate open circuit; see Figure 8 - 50 200 A IL latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 k; see Figure 10 - 2 6 mA IH holding current VD = 12 V; IGT = 0.
BT169 series NXP Semiconductors Thyristor logic level 001aab501 1.6 VGT VGT(25°C) IGT IGT(25°C) 1.2 2 0.8 1 0.4 −50 0 50 100 0 −50 150 Tj (°C) Fig 7. Normalized gate trigger voltage as a function of junction temperature. 001aab454 5 IT (A) 001aab502 3 Fig 8. 0 50 100 150 Tj (°C) Normalized gate trigger current as a function junction temperature. 001aab503 3 IL IL(25°C) 4 2 3 2 1 1 (1) 0 0.4 (2) (3) 1.2 2 2.8 0 −50 0 VT (V) 50 100 150 Tj (°C) RGK = 1 k. VO = 1.
BT169 series NXP Semiconductors Thyristor logic level 001aab504 3 001aab507 104 dVD/dt (V/μs) IH IH(25°C) (1) 2 103 1 102 (2) 0 −50 10 0 50 100 150 0 50 Tj (°C) 100 150 Tj (°C) RGK = 1 k. (1) RGK = 1 k. (2) Gate open circuit. Fig 11. Normalized holding current as a function of junction temperature. Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values. 7. Package information Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
BT169 series NXP Semiconductors Thyristor logic level 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1.
BT169 series NXP Semiconductors Thyristor logic level 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BT169_SERIES v.5 20110930 Product data sheet - 9397 750 13512 BT169_SERIES v.4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • BT169_SERIES v.
BT169 series NXP Semiconductors Thyristor logic level 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BT169 series NXP Semiconductors Thyristor logic level 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . .