Datasheet

Philips Semiconductors Product specification
Thyristors BT152 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance - - 1.1 K/W
junction to mounting base
R
th j-a
Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A - 3 32 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A - 25 80 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 15 60 mA
V
T
On-state voltage I
T
= 40 A - 1.4 1.75 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.6 1.5 V
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 ˚C 0.25 0.4 - V
I
D
, I
R
Off-state leakage current V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C - 0.2 1.0 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; 200 300 - V/µs
off-state voltage exponential waveform gate open circuit
t
gt
Gate controlled turn-on V
D
= V
DRM(max)
; I
G
= 0.1 A; dI
G
/dt = 5 A/µs; - 2 - µs
time I
TM
= 40 A
t
q
Circuit commutated V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C; - 70 - µs
turn-off time I
TM
= 50 A; V
R
= 25 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 50 V/µs; R
GK
= 100 Ω
March 1997 2 Rev 1.200