Datasheet

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 6 of 12
NXP Semiconductors
BT151 series L and R
Thyristors
6. Characteristics
Table 5. Characteristics
T
j
= 25 ° C unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 100 mA; see Figure 8
BT151-500L - 2 5 mA
BT151-500R - 2 15 mA
BT151-650L - 2 5 mA
BT151-650R - 2 15 mA
BT151-800R - 2 15 mA
I
L
latching current V
D
= 12 V; I
GT
= 100 mA; see
Figure 10
- 1040mA
I
H
holding current V
D
= 12 V; I
GT
= 100 mA; see
Figure 11
- 7 20 mA
V
T
on-state voltage I
T
= 23 A; see Figure 9 - 1.4 1.75 V
V
GT
gate trigger voltage I
T
= 100 mA; V
D
= 12 V; see Figure 7 - 0.6 1.5 V
I
T
= 100 mA; V
D
=V
DRM(max)
;
T
j
= 125 °C
0.25 0.4 - V
I
D
off-state current V
D
=V
DRM(max)
; T
j
= 125 °C - 0.1 0.5 mA
I
R
reverse current V
R
=V
RRM(max)
; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 0.67 × V
DRM(max)
; T
j
= 125 °C;
exponential waveform; see
Figure 12
R
GK
= 100 Ω 200 1000 - V/µs
gate open circuit 50 130 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
=V
DRM(max)
;
I
G
= 100 mA; dI
G
/dt = 5 A/µs
-2-µs
t
q
commutated turn-off
time
V
DM
= 0.67 × V
DRM(max)
; T
j
= 125 °C;
I
TM
= 20 A; V
R
=25V;
(dI
T
/dt)
M
=30A/µs; dV
D
/dt = 50 V/µs;
R
GK
= 100 Ω
-70-µs