Datasheet

ManualsBrandsNXP ManualsDiscrete SemiconductorsThyristor TO-220 800 V 12 A

1. Product proﬁle

1.1 General description

Passivated thyristors in a SOT78 plastic package.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BT151 series L and R

Thyristors

Rev. 04 — 23 October 2006 Product data sheet

n High thermal cycling performance n High bidirectional blocking voltage

n Motor control n Static switching

n Ignition circuits n Protection circuits

n V

DRM

≤ 500 V (BT151-500L/R) n I

TSM

≤ 120 A (t = 10 ms)

n V

RRM

≤ 500 V (BT151-500L/R) n I

T(RMS)

≤ 12 A

n V

DRM

≤ 650 V (BT151-650L/R) n I

T(AV)

≤ 7.5 A

n V

RRM

≤ 650 V (BT151-650L/R) n I

≤ 5 mA (BT151 series L)

n V

DRM

≤ 800 V (BT151-800R) n I

≤ 15 mA (BT151 series R)

n V

RRM

≤ 800 V (BT151-800R)

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode (K)

SOT78 (3-lead TO-220AB)

2 anode (A)

3 gate (G)

mb mounting base; connected to anode

sym037

Summary of content (12 pages)

PAGE 1
BT151 series L and R Thyristors Rev. 04 — 23 October 2006 Product data sheet 1. Product profile 1.1 General description Passivated thyristors in a SOT78 plastic package. 1.2 Features n High thermal cycling performance n High bidirectional blocking voltage 1.3 Applications n Motor control n Ignition circuits n Static switching n Protection circuits 1.
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BT151 series L and R NXP Semiconductors Thyristors 3. Ordering information Table 2. Ordering information Type number Package BT151-500L Name Description Version SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT151-500R BT151-650L BT151-650R BT151-800R 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BT151 series L and R NXP Semiconductors Thyristors 001aaa958 15 a= 1.57 Ptot (W) 105.5 Tmb(max) (°C) 1.9 2.2 10 112 2.8 4 5 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 118.5 α 0 125 0 2 4 6 8 IT(AV) (A) Form factor a = IT(RMS)/IT(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values 001aaa957 160 ITSM (A) IT ITSM 120 t tp Tj initial = 25 °C max 80 40 0 1 102 10 n 103 f = 50 Hz Fig 2.
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BT151 series L and R NXP Semiconductors Thyristors 001aaa956 103 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 10−2 tp (s) tp ≤ 10 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 001aaa954 25 IT(RMS) (A) 20 001aaa999 16 IT(RMS) (A) 12 15 8 10 4 5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb ≤ 109 °C Fig 4.
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BT151 series L and R NXP Semiconductors Thyristors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 6 - - 1.3 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W 001aaa962 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp T 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6.
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BT151 series L and R NXP Semiconductors Thyristors 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise stated.
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BT151 series L and R NXP Semiconductors Thyristors 001aaa953 1.6 VGT VGT(25°C) IGT IGT(25°C) 1.2 2 0.8 1 0.4 −50 0 50 100 150 001aaa952 3 0 −50 0 50 100 Tj (°C) Fig 7. Normalized gate trigger voltage as a function of junction temperature 001aaa959 30 150 Tj (°C) Fig 8. Normalized gate trigger current as a function of junction temperature 001aaa951 3 IL IL(25°C) IT (A) 2 20 (1) (2) (3) 1 10 0 0 0.5 1 1.5 2 0 −50 0 50 100 150 Tj (°C) VT (V) Vo = 1.06 V Rs = 0.
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BT151 series L and R NXP Semiconductors Thyristors 001aaa950 3 001aaa949 104 IH IH(25°C) dVD/dt (V/µs) 2 103 (1) (2) 102 1 0 −50 10 0 50 100 150 0 50 Tj (°C) 100 150 Tj (°C) (1) RGK = 100 Ω (2) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BT151_SER_L_R_4 Product data sheet © NXP B.V. 2006. All rights reserved. Rev.
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BT151 series L and R NXP Semiconductors Thyristors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 L2 max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.45 1.00 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.
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BT151 series L and R NXP Semiconductors Thyristors 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BT151_SER_L_R_4 20061023 Product data sheet - BT151_SERIES_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate.
PAGE 11
BT151 series L and R NXP Semiconductors Thyristors 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BT151 series L and R Thyristors 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . .