Datasheet

Philips Semiconductors Product specification
Thyristors BT149 series
logic level
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
, R
GK
= 1 kΩ.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
, R
GK
= 1 kΩ.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-lead
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5
0
1
2
3
4
5
typ
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.067 V
Rs = 0.187 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
0.01
0.1
1
10
Zth j-lead (K/W)
100
t
p
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
RGK = 1 kohms
September 2001 4 Rev 1.500