Datasheet

Philips Semiconductors Product specification
Thyristors BT149 series
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus lead temperature, T
lead
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead
≤ 83˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W
Tc(max) / C
125
119
113
107
101
95
89
83
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
77
a
1 10 100 1000
0
2
4
6
8
10
Number of half cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
1
10
100
1000
10us 100us 1ms
10ms
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
0.01 0.1 1 10
0
0.5
1
1.5
2
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
0.2
0.4
0.6
0.8
1
Tlead / C
IT(RMS) / A
83 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
September 2001 3 Rev 1.500