Datasheet

Philips Semiconductors Product specification
Thyristors BT149 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
Thermal resistance - - 60 K/W
junction to lead
R
th j-a
Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 10 mA; gate open circuit - 50 200 µA
I
L
Latching current V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ -26mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ -25mA
V
T
On-state voltage I
T
= 1 A - 1.2 1.35 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 10 mA; gate open circuit - 0.5 0.8 V
V
D
= V
DRM(max)
; I
T
= 10 mA; T
j
= 125 ˚C; 0.2 0.3 - V
gate open circuit
I
D
, I
R
Off-state leakage current V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C; - 0.05 0.1 mA
R
GK
= 1 kΩ
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; 500 800 - V/µs
off-state voltage exponential waveform; R
GK
= 1 kΩ
t
gt
Gate controlled turn-on I
TM
= 2 A; V
D
= V
DRM(max)
; I
G
= 10 mA; - 2 - µs
time dI
G
/dt = 0.1 A/µs
t
q
Circuit commutated V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C; - 100 - µs
turn-off time I
TM
= 1.6 A; V
R
= 35 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
September 2001 2 Rev 1.500