Datasheet

Philips Semiconductors Product specification
Thyristors BT149 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate thyristors in a SYMBOL PARAMETER MAX. MAX. MAX. UNIT
plastic envelope, intended for use in
general purpose switching and phase BT149 B D G
control applications. These devices are V
DRM
, V
RRM
Repetitive peak 200 400 600 V
intended to be interfaced directly to I
T(AV)
off-state voltages
microcontrollers,logic integrated circuits Average on-state 0.5 0.5 0.5 A
and other low power gate trigger circuits. I
T(RMS)
current
I
TSM
RMS on-state current 0.8 0.8 0.8 A
Non-repetitive peak 8 8 8 A
on-state current
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 gate
3 anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BDG
V
DRM
, V
RRM
Repetitive peak off-state - 200
1
400
1
600
1
V
voltages
I
T(AV)
Average on-state current half sine wave; - 0.5 A
T
lead
≤ 83 ˚C
I
T(RMS)
RMS on-state current all conduction angles - 0.8 A
I
TSM
Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
T
j
= 25 ˚C prior to surge
I
2
tI
2
t for fusing t = 10 ms - 0.32 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 2 A; I
G
= 10 mA; - 50 A/µs
on-state current after dI
G
/dt = 100 mA/µs
triggering
I
GM
Peak gate current - 1 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 2 W
P
G(AV)
Average gate power over any 20 ms period - 0.1 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
321
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 2001 1 Rev 1.500