Datasheet

Philips Semiconductors Product specification
Thyristors BT148W series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance - - 15 K/W
junction to solder point
R
th j-a
Thermal resistance pcb mounted, minimum footprint - 156 - K/W
junction to ambient pcb mounted, pad area as in fig:14 - 70 - K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A - 50 200 µA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A - 0.17 10 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 0.10 6 mA
V
T
On-state voltage I
T
= 2 A - 1.3 1.5 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.4 1.5 V
V
R
= V
RRM(max)
; I
T
= 0.1 A; T
j
= 110 ˚C 0.1 0.2 - V
I
D
, I
R
Off-state leakage current V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; - 50 - V/µs
off-state voltage exponential waveform; R
GK
= 100 Ω
t
gt
Gate controlled turn-on I
TM
= 4 A; V
D
= V
DRM(max)
; I
G
= 5 mA; - 2 - µs
time dI
G
/dt = 0.2 A/µs
t
q
Circuit commutated V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C; I
TM
= 2 A; - 100 - µs
turn-off time V
R
= 35 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
October 1997 2 Rev 1.300