Datasheet

9397 750 13437 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 23 September 2004 6 of 12
Philips Semiconductors
BT139 series E
Triacs; sensitive gate
6. Characteristics
Table 5: Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; Figure 8
T2+ G+ - 2.5 10 mA
T2+ G− - 4 10 mA
T2− G− - 5 10 mA
T2− G+ - 1125mA
I
L
latching current V
D
= 12 V; I
GT
= 0.1 A;
Figure 10
T2+ G+ - 3.2 30 mA
T2+ G− - 1640mA
T2− G− - 4 30 mA
T2− G+ - 5.5 40 mA
I
H
holding current V
D
= 12 V; I
GT
= 0.1 A;
Figure 11
- 4 45 mA
V
T
on-state voltage I
T
=20A;Figure 9 - 1.2 1.6 V
V
GT
gate trigger voltage V
D
= 12 V; I
T
= 0.1 A; Figure 7 - 0.7 1.5 V
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 °C
0.25 0.4 - V
I
D
off-state leakage
current
V
D
=V
DRM(max)
; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt critical rate of rise of
off-state voltage
V
DM
=67% V
DRM(max)
;
T
j
= 125 °C; exponential
waveform; gate open circuit
-50-V/µs
t
gt
gate controlled
turn-on time
I
TM
= 20 A; V
D
=V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
-2-µs