Datasheet

9397 750 13437 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 23 September 2004 2 of 12
Philips Semiconductors
BT139 series E
Triacs; sensitive gate
3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
Table 2: Ordering information
Type number Package
Name Description Version
BT139-600E SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78
BT139-800E
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage
BT139-600E
[1]
- 600 V
BT139-800E - 800 V
I
T(RMS)
RMS on-state current full sinewave;
T
mb
≤ 99 °C; Figure 4
and
Figure 5
-16A
I
TSM
non-repetitive peak on-state current full sine wave;
T
j
=25°C prior to
surge;
Figure 2 and
Figure 3
t = 20 ms - 155 A
t = 16.7 ms - 170 A
I
2
tI
2
t for fusing t = 10 ms - 120 A
2
s
dI
T
/dt repetitive rate of rise of on-state
current after triggering
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+ - 50 A/µs
T2+ G− -50A/µs
T2− G− -50A/µs
T2− G+ - 10 A/µs
I
GM
peak gate current - 2 A
V
GM
peak gate voltage - 5 V
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 125 °C