Datasheet

ManualsBrandsNXP ManualsDiscrete SemiconductorsTriac TO-220 800 V 16 A

1. Product proﬁle

1.1 General description

Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package.

1.2 Features

■ High sensitivity in all four quadrants.

1.3 Applications

1.4 Quick reference data

2. Pinning information

BT139 series E

Triacs; sensitive gate

Rev. 03 — 23 September 2004 Product data sheet

■ General purpose bidirectional switching ■ Phase control.

■ V

DRM

≤ 600 V (BT139-600E) ■ I

TSM

≤ 155 A

■ V

DRM

≤ 800 V (BT139-800E) ■ I

≤ 10 mA (T2+ G+; T2+ G−; T2− G−)

■ I

T(RMS)

≤ 16 A ■ I

≤ 25 mA (T2− G+).

Table 1: Pinning

Pin Description Simpliﬁed outline Symbol

1 main terminal 1 (T1)

SOT78 (TO-220AB)

2 main terminal 2 (T2)

3 gate (G)

mb mounting base, connected to main

terminal 2 (T2)

sym051

Summary of content (12 pages)

PAGE 1
BT139 series E Triacs; sensitive gate Rev. 03 — 23 September 2004 Product data sheet 1. Product profile 1.1 General description Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package. 1.2 Features ■ High sensitivity in all four quadrants. 1.3 Applications ■ General purpose bidirectional switching ■ Phase control. 1.
PAGE 2
BT139 series E Philips Semiconductors Triacs; sensitive gate 3. Ordering information Table 2: Ordering information Type number Package BT139-600E Name Description Version SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT139-800E 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab093 25 α= 180 Ptot (W) 20 95 Tmb(max) (°C) 101 120 90 15 107 60 30 10 113 α α 5 119 0 0 5 10 125 20 15 IT(RMS) (A) α = conduction angle. Fig 1. Total power dissipation as a function of RMS on-state current; maximum values. 001aab102 160 ITSM (A) IT ITSM 120 T t Tj(initial) = 25 °C max 80 40 0 1 102 10 103 n f = 50 Hz. Fig 2.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab092 103 ITSM (A) 102 (1) IT ITSM (2) T t Tj(initial) = 25 °C max 10 10−2 10−1 1 102 10 T (ms) tp ≤ 20 ms. (1) dIT/dt limit. (2) T2− G+ quadrant. Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values. 001aab090 50 IT(RMS) (A) 40 001aab091 20 IT(RMS) (A) (1) 15 30 10 20 5 10 0 10−2 10−1 1 10 surge duration (s) f = 50 Hz; Tmb ≤ 99 °C. 0 −50 50 100 150 Tmb (°C) (1) Tmb = 99 °C.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Figure 6 - - 1.2 K/W half cycle; Figure 6 - - 1.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit T2+ G+ - 2.5 10 mA T2+ G− - 4 10 mA T2− G− - 5 10 mA T2− G+ - 11 25 mA T2+ G+ - 3.2 30 mA T2+ G− - 16 40 mA T2− G− - 4 30 mA T2− G+ - 5.5 40 mA Static characteristics IGT IL gate trigger current latching current VD = 12 V; IT = 0.1 A; Figure 8 VD = 12 V; IGT = 0.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab101 1.6 001aab448 3 VGT(Tj) VGT(25°C) IGT (Tj) IGT(25°C) 1.2 2 (1) (2) (3) (4) 0.8 1 0.4 −50 0 50 100 150 Tj (°C) 0 −50 0 50 100 150 Tj (°C) (1) T2− G+. (2) T2+ G−. (3) T2− G−. (4) T2+ G+. Fig 7. Normalized gate trigger voltage as a function of junction temperature. 001aab094 50 IT (A) 40 (1) (2) Fig 8. Normalized gate trigger current as a function of junction temperature.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab099 3 IH(Tj) IH(25°C) 001aab452 103 dVD /dt (V/µs) 2 102 1 0 −50 0 50 100 150 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature. 10 0 100 Tj (°C) 150 Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values. 9397 750 13437 Product data sheet 50 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.
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BT139 series E Philips Semiconductors Triacs; sensitive gate 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BT139_SERIES_E_3 20040923 Product data sheet - BT139_SERIES_E_2 Modifications: • 9397 750 13437 The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors.
PAGE 11
BT139 series E Philips Semiconductors Triacs; sensitive gate 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
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Philips Semiconductors BT139 series E Triacs; sensitive gate 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . .