Datasheet

1;3 SemiconductorV Product specification
Triacs BT134W series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
R
th j-a
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134W- ... ...F ...G
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 5 15 15 30 mA
V
T
On-state voltage I
T
= 2 A - 1.2 1.50 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.7 1.5 V
V
D
= 400 V; I
T
= 0.1 A; 0.25 0.4 - V
T
j
= 125 ˚C
I
D
Off-state leakage current V
D
= V
DRM(max)
; - 0.1 0.5 mA
T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134W- ... ...F ...G
dV
D
/dt Critical rate of rise of V
DM
=67% V
DRM(max)
; 100 50 200 250 - V/μs
off-state voltage T
j
= 125 ˚C; exponential
waveform; gate open
circuit
dV
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 95 ˚C; - - 10 50 - V/μs
commutating voltage I
T(RMS)
= 1 A;
dI
com
/dt = 1.8 A/ms; gate
open circuit
t
gt
Gate controlled turn-on I
TM
= 1.5 A; - - - 2 - μs
time V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs;
September 1997 2 Rev 1.200