Datasheet

2004 Jan 14 3
NXP Semiconductors Product data sheet
NPN switching transistor BSV52
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 20 V − − 400 nA
I
E
= 0; V
CB
= 20 V; T
j
= 125 °C − − 30 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 4 V − − 100 nA
h
FE
DC current gain V
CE
= 1 V
I
C
= 1 mA 25 − −
I
C
= 10 mA 40 − 120
I
C
= 50 mA 25 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 300 µA − − 300 mV
I
C
= 10 mA; I
B
= 1 mA − − 250 mV
I
C
= 50 mA; I
B
= 5 mA − − 400 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA 700 − 850 mV
I
C
= 50 mA; I
B
= 5 mA − − 1. 2 V
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz − − 4 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz − − 4.5 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 400 500 − MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
= −1.5 mA
− − 10 ns
t
d
delay time − − 4 ns
t
r
rise time − − 6 ns
t
off
turn-off time − − 20 ns
t
s
storage time − − 10 ns
t
f
fall time − − 10 ns