Datasheet

1997 Jun 18 6
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS84
Fig.10 Temperature coefficient of gate-source
threshold voltage.
I
D
= −1 mA; V
DS
=V
GS
.
k
V
GSth
at T
j
V
GSth
at 25°C
--------------------------------------
=
handbook, halfpage
0.6
0.8
1.0
1.2
0 50 100 150
k
MLD195
−50
T
j
(°C)
Fig.11 Temperature coefficient of drain-source
on-state resistance.
(1) I
D
= −130 mA; V
GS
= −10 V.
(2) I
D
= −20 mA; V
GS
= −2.4 V.
k
R
DSon
at T
j
R
DSon
at 25 °C
-----------------------------------------
=
handbook, halfpage
0.6
1.0
1.4
1.8
0 50 100 150−50
k
T
j
(°C)
MLD194
(1)
(2)
Fig.12 Thermal resistance from junction to ambient as a function of pulse time; typical values.
T
amb
=25°C.
handbook, full pagewidth
1
10
10
3
10
2
t
p
(s)
110
MLD250
R
th j-a
(K/W)
10
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
2
10
3
10
−1
δ =
0.75
0.5
0.1
0
0.05
0.01
0.02
0.2
t
p
t
p
T
P
t
T
δ =