Datasheet

1997 Jun 18 5
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS84
Fig.6 Capacitance as a function of drain source
voltage; typical values.
V
GS
= 0; T
j
=25°C; f = 1 MHz.
handbook, halfpage
0
80
60
40
20
0
−10 −20 −30
MLD191
C
(pF)
V
DS
(V)
C
iss
C
oss
C
rss
Fig.7 Typical output characteristics.
T
j
=25°C.
handbook, halfpage
0 −2 −10 −12
−600
−200
0
−400
MLD197
−4 −6 −8
V
DS
(V)
V
GS = −10 V
−7.5 V
−6 V
−5 V
−4 V
−3 V
−2.5 V
I
D
(mA)
Fig.8 Typical transfer characteristics.
V
DS
= −10 V; T
j
=25°C.
handbook, halfpage
0 −2 −4 −10
−600
−200
0
−400
MLD196
−6
I
D
(mA)
V
GS
(V)
−8
Fig.9 Drain-source on-state resistance as a
function of drain current; typical values.
T
j
=25°C.
handbook, halfpage
60
0
40
−1
MLD198
−10 −10
2
−10
3
20
I
D
(mA)
R
DSon
(Ω)
V
GS
= −2.5 V
−3 V
−7.5 V
−10 V
−5 V
−4 V