Datasheet

1997 Jun 18 3
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS84
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Device mounted on a printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) −−50 V
V
GSO
gate-source voltage (DC) open drain −±20 V
I
D
drain current (DC) −−130 mA
I
DM
peak drain current −−520 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= −10 µA −50 −−V
V
GSth
gate-source threshold voltage V
DS
=V
GS
; I
D
= −1mA −0.8 −−2V
I
DSS
drain-source leakage current V
GS
= 0; V
DS
= −40 V −−−100 nA
V
GS
= 0; V
DS
= −50 V −−−10 µA
V
GS
= 0; V
DS
= −50 V; T
j
= 125 °C −−−60 µA
I
GSS
gate leakage current V
DS
= 0; V
GS
= ±20 V −−±10 nA
R
DSon
drain-source on-state resistance V
GS
= −10 V; I
D
= −130 mA −−10 Ω
y
fs
 forward transfer admittance V
DS
= −25 V; I
D
= −130 mA 50 −−mS
C
iss
input capacitance V
GS
= 0; V
DS
= −25 V; f = 1 MHz − 25 45 pF
C
oss
output capacitance V
GS
= 0; V
DS
= −25 V; f = 1 MHz − 15 25 pF
C
rss
reverse transfer capacitance V
GS
= 0; V
DS
= −25 V; f = 1 MHz − 3.5 12 pF
Switching times (see Figs 2 and 3)
t
on
turn-on time V
GS
=0to−10 V; V
DD
= −40 V;
I
D
= −200 mA
− 3 − ns
t
off
turn-off time V
GS
= −10 to 0 V; V
DD
= −40 V;
I
D
= −200 mA
− 7 − ns