Datasheet

1997 Jun 18 2
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS84
FEATURES
• Low threshold voltage
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Line current interrupter in telephone sets
• Relay, high speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT23 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
Fig.1 Simplified outline and symbol.
Marking code: SP
handbook, halfpage
21
3
Top view
MAM188
s
d
g
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) −−50 V
V
GSO
gate-source voltage (DC) open drain −±20 V
V
GSth
gate-source threshold voltage I
D
= −1 mA; V
DS
=V
GS
−0.8 −2V
I
D
drain current (DC) −−130 mA
R
DSon
drain-source on-state resistance I
D
= −130 mA; V
GS
= −10 V − 10 Ω
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW