Datasheet

BSS138P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 7 of 16
NXP Semiconductors
BSS138P
60 V, 360 mA N-channel Trench MOSFET
T
amb
=25°CT
amb
=25°C; V
DS
=5V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
amb
=25°C
(1) V
GS
=2.0V
(2) V
GS
=2.5V
(3) V
GS
=3.0V
(4) V
GS
=3.5V
(5) V
GS
=10V
I
D
=300mA
(1) T
amb
= 150 °C
(2) T
amb
=25°C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0.0 4.03.01.0 2.0
017aaa112
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0.0
3.0 V
2.25 V
2.0 V
2.5 V
2.75 V
V
GS
= 3.5 V
017aaa113
10
−4
10
−5
10
−3
I
D
(A)
10
−6
V
GS
(V)
0.0 2.01.50.5 1.0
(2)(1)
(3)
I
D
(A)
0.0 1.00.80.4 0.60.2
017aaa114
2.0
3.0
1.0
4.0
5.0
R
DSon
(Ω)
0.0
(2)(1)
(3)
(5)
(4)
V
GS
(V)
0.0 10.08.04.0 6.02.0
017aaa115
2.0
4.0
6.0
R
DSon
(Ω)
0.0
(1)
(2)