Datasheet

1997 Jun 20 7
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
1
10
t
p
(s)
1
MBE147
R
th j-s
(K/W)
10
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
t
p
T
P
t
T
δ
=
δ =
0.75
0.5
0.1
0
0.05
0.33
0.01
0.02
0.2