Datasheet

1997 Jun 20 6
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.8 Source current as a function of source-drain
diode forward voltage.
V
GD
=0.
(1) T
j
= 150 °C.
(2) T
j
=25°C.
(3) T
j
= −55 °C.
handbook, halfpage
0 −0.5 −1 −1.5 −2 −2.5
−6
−2
0
−4
MBE148
I
S
(A)
V
SD
(V)
(1)
(2)
(3)
Fig.9 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
−V
DS
≥−I
D
×R
DSon
; T
j
=25°C.
(1) I
D
= −0.1 A.
(2) I
D
= −0.5 A.
(3) I
D
= −1A.
(4) I
D
= −3A.
(5) I
D
= −6A.
handbook, halfpage
−100
(1) (4) (5)
V
GS
(V)
R
DSon
(mΩ)
−2 −4 −6 −8
10
4
10
3
10
2
MDA218
(2)(3)
Fig.10 Temperature coefficient of gate-source
threshold voltage.
handbook, halfpage
0.6
0.7
0.8
0.9
1.0
1.2
1.1
0 50 100 150−50
k
T
j
(°C)
MBE138
Typical V
GSth
at I
D
= −1 mA; V
DS
=V
GS
=V
GSth
.
k
V
GSth
at T
j
V
GSth
at 25°C
--------------------------------------
=
Fig.11 Temperature coefficient of drain-source
on-resistance.
Typical R
DSon
at:
(1) I
D
= −1 A; V
GS
= −10 V.
(2) I
D
= −0.5 A; V
GS
= −4.5 V.
k
R
DSon
at T
j
R
DSon
at 25 °C
-----------------------------------------
=
handbook, halfpage
0.6
0.8
1.0
1.2
1.4
1.8
1.6
0 50 100 150−50
k
T
j
(°C)
MBE146
(1)
(2)