Datasheet

1997 Jun 20 5
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.4 Capacitance as a function of drain source
voltage; typical values.
V
GS
=0.
T
j
=25°C.
handbook, halfpage
0
600
400
200
0
−10 −20 −30
MBE144
C
(pF)
V
DS
(V)
C
iss
C
oss
C
rss
Fig.5 Output characteristics; typical values.
T
j
=25°C.
handbook, halfpage
0 −2 −10 −12
−10
−12
−8
−6
−2
0
−4
MBE149
−4 −6 −8
V (V)
DS
I
D
(A)
V
GS =
−10 V
−6 V
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−7.5 V
Fig.6 Transfer characteristic, typical values.
V
DS
= −10 V.
T
j
=25°C.
handbook, halfpage
0 −2 −4 −8
−16
−12
−4
0
−8
MBE150
−6
I
D
(A)
V
GS
(V)
Fig.7 Gate-source voltage as a function of total
gate charge.
V
DD
= −15 V.
I
D
= −3A.
handbook, halfpage
0 −2 −4 −10−8
−10
0
−8
MBE145
−6
−6
−4
−2
Q
g
(nC)
V
GS
(V)