Datasheet

1997 Jun 20 4
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy printed-circuit board, 40 × 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm
2
.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
R
th j-s
thermal resistance from junction to soldering point 10 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= −10 µA −30 −−V
V
GSth
gate-source threshold voltage V
GS
=V
DS
; I
D
= −1mA −1 −−2.8 V
I
DSS
drain-source leakage current V
GS
= 0; V
DS
= −24 V −−−100 nA
I
GSS
gate leakage current V
GS
= ±20 V; V
DS
=0 −−±100 nA
I
Don
on-state drain current V
GS
= −10 V; V
DS
= −1V −3 −−A
V
GS
= −4.5 V; V
DS
= −5V −1 −−A
R
DSon
drain-source on-state resistance V
GS
= −4.5 V; I
D
= −0.5 A − 0.33 0.4 Ω
V
GS
= −10 V; I
D
= −1A − 0.22 0.25 Ω
y
fs
 forward transfer admittance V
DS
= −20 V; I
D
= −1A 1 2 − S
C
iss
input capacitance V
GS
= 0; V
DS
= −20 V; f = 1 MHz − 250 − pF
C
oss
output capacitance V
GS
= 0; V
DS
= −20 V; f = 1 MHz − 140 − pF
C
rss
reverse transfer capacitance V
GS
= 0; V
DS
= −20 V; f = 1 MHz − 50 − pF
Q
G
total gate charge V
GS
= −10 V; V
DS
= −15 V;
I
D
= −2.3 A
− 10 25 nC
Q
GS
gate-source charge V
GS
= −10 V; V
DS
= −15 V;
I
D
= −2.3 A
− 1 − nC
Q
GD
gate-drain charge V
GS
= −10 V; V
DS
= −15 V;
I
D
= −2.3 A
− 3 − nC
Switching times
t
on
turn-on time V
GS
=0to−10 V; V
DD
= −20 V;
I
D
= −1 A; R
L
=20Ω
− 20 80 ns
t
off
turn-off time V
GS
= −10 to 0 V; V
DD
= −20 V;
I
D
= −1 A; R
L
=20Ω
− 50 140 ns
Source-drain diode
V
SD
source-drain diode forward voltage V
GD
= 0; I
S
= −1.25 A −−−1.6 V
t
rr
reverse recovery time I
S
= −1.25 A; di/dt = 100 A/µs − 150 200 ns