Datasheet

1997 Jun 20 2
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-resistance.
APPLICATIONS
• Low-loss motor and actuator drivers
• Power switching.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN SYMBOL DESCRIPTION
1 g gate
2 d drain
3 s source
4 d drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM121
4
123
Top view
s
d
g
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) −−30 V
V
SD
source-drain diode forward voltage I
S
= −1.25 A −−1.6 V
V
GSO
gate-source voltage (DC) open drain −±20 V
V
GSth
gate-source threshold voltage I
D
= −1 mA; V
DS
=V
GS
−1 −2.8 V
I
D
drain current (DC) −−3A
R
DSon
drain-source on-state resistance I
D
= −1 A; V
GS
= −10 V − 0.25 Ω
P
tot
total power dissipation T
s
= 100 °C − 5W