DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 FEATURES PINNING - SOT223 • High-speed switching PIN SYMBOL • No secondary breakdown 1 g gate • Very low on-resistance. 2 d drain 3 s source 4 d drain APPLICATIONS DESCRIPTION • Low-loss motor and actuator drivers • Power switching. DESCRIPTION 4 handbook, halfpage d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − −30 V VGSO gate-source voltage (DC) open drain − ±20 V ID drain current (DC) Ts ≤ 100 °C − −3 A IDM peak drain current note 1 − −12 A Ptot total power dissipation Ts = 100 °C − 5 W Tamb = 25 °C; note 2 − 1.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE UNIT 75 K/W 10 K/W note 1 Note 1. Device mounted on an epoxy printed-circuit board, 40 × 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2. CHARACTERISTICS Tj = 25 °C unless otherwise specified.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 MBE144 600 MBE149 −12 handbook, halfpage handbook, halfpage V GS = ID −10 V (A) −10 C (pF) −7.5 V −6 V −8 400 −5 V −6 Ciss −4.5 V −4 200 −4 V Coss 0 −10 0 −20 −3.5 V −2 Crss −3 V −2.5 V VDS (V) 0 −30 −2 0 −4 −6 −8 −10 −12 V DS (V) VGS = 0. Tj = 25 °C. Tj = 25 °C. Fig.4 Capacitance as a function of drain source voltage; typical values. Fig.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 MBE148 −6 MDA218 104 handbook, halfpage handbook, halfpage IS (A) RDSon (mΩ) −4 (1)(2)(3) (4) (5) 103 (1) (2) (3) −2 0 −0.5 0 −1 −1.5 102 −2 −2.5 VSD (V) Source current as a function of source-drain diode forward voltage. MBE138 1.2 MBE146 k k 1.1 1.6 1.0 1.4 0.9 1.2 0.8 1.0 0.7 0.8 0.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor 10 handbook, full pagewidth Rth j-s (K/W) BSP250 MBE147 δ= 0.75 0.5 0.33 0.2 0.1 1 0.05 0.02 tp δ= T P 0.01 0 t tp T 10−1 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP250 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor NOTES 1997 Jun 20 10 BSP250
Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor NOTES 1997 Jun 20 11 BSP250
Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd.
