Datasheet

NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 December 2014 9 / 16
Q
G
(nC)
0 10.80.4 0.60.2
aaa-015768
4
6
2
8
10
V
GS
(V)
0
I
D
= 0.2 A; V
DS
= 30 V; T
amb
= 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
aaa-015769
V
SD
(V)
0 1.20.80.4
0.10
0.05
0.15
0.20
I
S
(A)
0
(1)
(2)
V
GS
= 0 V
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values