Datasheet

NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 December 2014 7 / 16
V
DS
(V)
0 431 2
aaa-015760
0.4
0.2
0.6
0.8
I
D
(A)
0
3.5 V
2.5 V
2.2 V
1.8 V
V
GS
= 10 V
2.0 V
4.5 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-015761
10
-4
10
-5
10
-3
I
D
(A)
10
-6
V
GS
(V)
0 2.01.50.5 1.0
(1)
(2)
(3)
T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 0.80.60.2 0.4
aaa-015762
4
2
6
8
R
DSon
(Ω)
0
3.5 V
V
GS
= 10 V
4.5 V
1.8 V
2.0 V
2.2 V
2.5 V
3.0 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 1084 62
aaa-015763
4
2
6
8
R
DSon
(Ω)
0
(1)
(2)
I
D
= 0.2 A
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values