Datasheet

NXP Semiconductors
BSN20BK
60 V, N-channel Trench MOSFET
BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 December 2014 6 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 60 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C 0.6 1 1.4 V
I
DSS
drain leakage current V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 10 µA
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 5 V; V
DS
= 0 V; T
j
= 25 °C - - 0.3 µA
I
GSS
gate leakage current
V
GS
= -5 V; V
DS
= 0 V; T
j
= 25 °C - - -0.3 µA
V
GS
= 10 V; I
D
= 200 mA; T
j
= 25 °C - 2.1 2.8 Ω
V
GS
= 10 V; I
D
= 200 mA; T
j
= 150 °C - 4.3 5.7 Ω
V
GS
= 5 V; I
D
= 200 mA; T
j
= 25 °C - 2.2 3.2 Ω
R
DSon
drain-source on-state
resistance
V
GS
= 2.5 V; I
D
= 75 mA; T
j
= 25 °C - 2.6 4 Ω
g
fs
forward
transconductance
V
DS
= 10 V; I
D
= 200 mA; T
j
= 25 °C - 0.71 - S
Dynamic characteristics
Q
G(tot)
total gate charge - 0.49 - nC
Q
GS
gate-source charge - 0.12 - nC
Q
GD
gate-drain charge
V
DS
= 30 V; I
D
= 200 mA; V
GS
= 4.5 V;
T
j
= 25 °C
- 0.12 - nC
C
iss
input capacitance - 20.2 - pF
C
oss
output capacitance - 3.1 10 pF
C
rss
reverse transfer
capacitance
V
DS
= 30 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 2 7 pF
t
d(on)
turn-on delay time - 7.9 - ns
t
r
rise time - 8.4 - ns
t
d(off)
turn-off delay time - 12.5 - ns
t
f
fall time
V
DS
= 30 V; I
D
= 200 mA; V
GS
= 4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 5.1 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 200 mA; V
GS
= 0 V; T
j
= 25 °C - 0.86 1.2 V