SO T2 3 BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM 3.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number BSN20BK Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 265 mA VGS = 10 V; Tamb = 100 °C [1] - 170 mA VGS = 10 V; Tsp = 25 °C - 330 mA - 0.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-015759 1 (1) Limit RDSon = VDS/ID ID (A) (2) 10-1 (3) (4) (5) (6) 10-2 (7) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 10 µs (2) tp = 100 µs (3) tp = 1 ms (4) tp = 10 ms (5) DC; Tsp = 25 °C (6) tp = 100 ms 2 (7) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-014128 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 102 0.33 0.25 0.20 0.10 0.05 0 0.01 0.02 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-014129 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.20 0.25 0.10 0.05 0 0.01 10 10-3 0.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 1 1.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-015760 0.8 VGS = 10 V ID (A) 4.5 V 0.6 aaa-015761 10-3 ID (A) 2.5 V 3.5 V 0.4 (2) (1) 10-4 (3) 2.2 V 10-5 2.0 V 0.2 1.8 V 0 Fig. 6. 0 1 2 3 VDS (V) 4 10-6 0 0.5 1.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. aaa-015762 8 1.8 V RDSon (Ω) 2.0 V 1.5 2.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-015764 0.6 aaa-015765 2.5 a ID (A) 2.0 0.4 1.5 1.0 (1) 0.2 0.5 (2) 0 0 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 150 °C (2) Tj = 25 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-015766 2.0 aaa-015767 102 VGS(th) (V) 1.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-015768 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 Fig. 15. MOSFET transistor: Gate charge waveform definitions 0.8 1 QG (nC) ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-015769 0.20 IS (A) 0.15 0.10 (1) 0.05 (2) 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition BSN20BK Product data sheet All information provided in this document is subject to legal disclaimers. 18 December 2014 © NXP Semiconductors N.V. 2014.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 HE 1.9 0.95 Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BSN20BK v.1 20141218 Product data sheet - - BSN20BK Product data sheet All information provided in this document is subject to legal disclaimers. 18 December 2014 © NXP Semiconductors N.V. 2014.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
BSN20BK NXP Semiconductors 60 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ...........................................
