Datasheet

Philips Semiconductors Product specification
P-channel enhancement mode BSH201
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
BSH201
-14
-12
-10
-8
-6
-4
-2
0
012345
Gate charge, (nC)
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 20 Ohms
Tj = 25 C
BSH201
0
0.5
1
1.5
2
2.5
3
3.5
0 0.5 1 1.5 2
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
August 1998 5 Rev 1.000