Datasheet

Philips Semiconductors Product specification
P-channel enhancement mode BSH201
MOS transistor
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 ˚C .
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
BSH201
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-5.5-5-4.5-4-3.5-3-2.5-2-1.5-1-0.50
Gate-Source Voltage, VGS (V)
VDS > ID X RDS(on)
Tj = 25 C
150 C
Drain Current, ID (A)
Threshold Voltage, VGS(to), (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150
Junction Temperature, Tj (C)
minimum
typical
BSH201
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-1-0.9-0.8-0.7-0.6-0.5-0.4-0.3-0.2-0.10
Drain Current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID X RDS(on)
BSH201
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
-2.5 -2 -1.5 -1
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
VDS = -5 V
Tj = 25 C
Normalised Drain-Source On Resistance
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0 25 50 75 100 125 150
Junction Temperature, Tj (C)
VGS = -10 V
-4.5 V
RDS(ON) @ Tj
RDS(ON) @ 25C
BSH201
1
10
100
1000
-0.1 -1.0 -10.0 -100.0
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1998 4 Rev 1.000