Datasheet

Philips Semiconductors Product specification
P-channel enhancement mode BSH201
MOS transistor
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= -10 µA -60 - - V
voltage
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= -1 mA -1 -1.9 - V
T
j
= 150˚C -0.4 - - V
R
DS(ON)
Drain-source on-state V
GS
= -10 V; I
D
= -160 mA - 2.1 2.5 Ω
resistance V
GS
= -4.5 V; I
D
= -80 mA - 2.7 3.75 Ω
V
GS
= -10 V; I
D
= -160 mA; T
j
= 150˚C - 3.6 4.25 Ω
g
fs
Forward transconductance V
DS
= -48 V; I
D
= -160 mA 0.1 0.35 - S
I
GSS
Gate source leakage current V
GS
= ±20 V; V
DS
= 0 V - ±10 ±100 nA
I
DSS
Zero gate voltage drain V
DS
= -48 V; V
GS
= 0 V; - -50 -100 nA
current T
j
= 150˚C - -1.3 -10 µA
Q
g(tot)
Total gate charge I
D
= -0.5 A; V
DD
= -10 V; V
GS
= -10 V - 3 - nC
Q
gs
Gate-source charge - 0.5 - nC
Q
gd
Gate-drain (Miller) charge - 0.4 - nC
t
d on
Turn-on delay time V
DD
= -10 V; I
D
= -0.5 A; - 2 - ns
t
r
Turn-on rise time V
GS
= -10 V; R
G
= 6 Ω - 4.5 - ns
t
d off
Turn-off delay time Resistive load - 45 - ns
t
f
Turn-off fall time - 20 - ns
C
iss
Input capacitance V
GS
= 0 V; V
DS
= -48 V; f = 1 MHz - 70 - pF
C
oss
Output capacitance - 15 - pF
C
rss
Feedback capacitance - 5 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain T
a
= 25 ˚C - - -0.3 A
current
I
DRM
Pulsed reverse drain current - - -1.2 A
V
SD
Diode forward voltage I
F
= -0.38 A; V
GS
= 0 V - -0.97 -1.3 V
t
rr
Reverse recovery time I
F
= -0.25 A; -dI
F
/dt = 100 A/µs; - 38 - ns
Q
rr
Reverse recovery charge V
GS
= 0 V; V
R
= -48 V - 58 - nC
August 1998 2 Rev 1.000