Datasheet

Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
Product specification Rev. 02 — 25 October 2000 8 of 13
9397 750 07652
© Philips Electronics N.V. 2000. All rights reserved.
T
j
=25°C and 150 °C; V
GS
=0V I
D
= 0.5 A; V
DD
= 15 V; T
j
=25°C
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03aa85
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
(V)
I
S
(A)
150
o
C
T
j
= 25
o
C
V
GS
= 0V
03ab10
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
012345678910
Q
G
(nC)
V
GS
(V)
I
D
= 0.5 A
T
j
= 25
o
C
V
DD
= 15 V