Datasheet

Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
Product specification Rev. 02 — 25 October 2000 2 of 13
9397 750 07652
© Philips Electronics N.V. 2000. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 30 V
I
D
drain current (DC) T
sp
=25°C; V
GS
=5V − 1.9 A
P
tot
total power dissipation T
sp
=25°C − 0.83 W
T
j
junction temperature − 150 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 1 A 77 120 mΩ
V
GS
=5V; I
D
= 1 A 102 140 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 30 V
V
DGR
drain-gate voltage (DC) T
j
=25to150°C; R
GS
=20kΩ−30 V
V
GS
gate-source voltage (DC) −±20 V
I
D
drain current (DC) T
sp
=25°C; V
GS
=5V;Figure 2 and 3 − 1.9 A
T
sp
= 100 °C; V
GS
=5V;Figure 2 − 1.2 A
I
DM
peak drain current T
sp
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 − 7.5 A
P
tot
total power dissipation T
sp
=25°C; Figure 1 − 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature −65 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
sp
=25°C − 0.83 A
I
SM
peak source (diode forward) current T
sp
=25°C; pulsed; t
p
≤ 10 µs − 3.3 A