Datasheet

1997 Oct 29 5
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93
Fig.6 Transition frequency as a function of
collector current; typical values.
V
CE
= 5 V; f = 500 MHz; T
j
=25°C.
handbook, halfpage
01020 40
6
0
2
4
MEA449
I (mA)
C
f
T
(GHz)
30
Fig.7 Gain as a function of frequency;
typical values.
I
C
= 30 mA; V
CE
= 5 V; T
amb
=25°C.
handbook, halfpage
MEA419
0
20
30
10
2
10
3
10
4
10
f (MHz)
gain
(dB)
G
UM
I S I
12
2
Fig.8 Minimum noise figure as a function of
collector current; typical values.
V
CE
= 5 V; f = 500 MHz; Z
S
= opt.; T
amb
=25°C.
handbook, halfpage
MEA453
0
10
0
3010 20
F
(dB)
5
40
I (mA)
C
Fig.9 Minimum noise figure as a function of
frequency; typical values.
I
C
= 2 mA; V
CE
= 5 V; Z
S
= opt.; T
amb
=25°C.
handbook, halfpage
10
0
10
MEA452
110
2
4
6
8
F
(dB)
f (GHz)
–1