Datasheet

1997 Oct 29 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. Die mounted in a SOT37 package (BFR91).
3. I
C
= 30 mA; V
CE
= 5 V; R
L
=75Ω; VSWR < 2; T
amb
=25°C;
V
p
=V
O
= 300 mV at f
p
= 495.25 MHz;
V
q
=V
O
−6 dB at f
q
= 503.25 MHz;
V
r
=V
O
−6 dB at f
r
= 505.25 MHz;
measured at f
p
+f
q
−f
r
= 493.25 MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
≤ 95 °C; note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=10V −−50 nA
h
FE
DC current gain I
C
= 30 mA; V
CE
= 5 V 40 90 −
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz − 0.7 − pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= 0.5 V; f = 1 MHz − 1.8 − pF
C
re
feedback capacitance I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
=25°C
− 0.8 − pF
f
T
transition frequency I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz − 5 − GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
=25°C
− 16.5 − dB
F noise figure (note 2) I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
Z
S
= opt.; T
amb
=25°C
− 1.9 − dB
d
im
intermodulation distortion note 3 −−60 − dB
G
UM
10 log
S
21
2
1 S
11
2
–


1 S
22
2
–


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dB=