Datasheet

1997 Oct 29 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93
FEATURES
• Very low intermodulation distortion
• High power gain
• Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
APPLICATIONS
• RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 SOT23.
page
MSB003 Top view
12
3
Marking code: R1p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter − 15 V
V
CEO
collector-emitter voltage open base − 12 V
I
C
collector current (DC) − 35 mA
P
tot
total power dissipation T
s
≤ 95 °C − 300 mW
C
re
feedback capacitance I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz 0.8 − pF
f
T
transition frequency I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
j
=25°C
5 − GHz
G
UM
maximum unilateral power gain I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
=25°C
16.5 − dB
F noise figure I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
=25°C
1.9 − dB
d
im
intermodulation distortion I
C
= 30 mA; V
CE
=5V; R
L
=75Ω;
V
O
= 300 mV; f
p
+f
q
−f
r
= 493.25 MHz;
T
amb
=25°C
−60 − dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 15 V
V
CEO
collector-emitter voltage open base − 12 V
V
EBO
emitter-base voltage open collector − 2V
I
C
collector current (DC) − 35 mA
P
tot
total power dissipation T
s
≤ 95 °C; note 1 − 300 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 175 °C