DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 FEATURES DESCRIPTION • Very low intermodulation distortion NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. • High power gain • Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. 3 page 1 PINNING PIN APPLICATIONS • RF wideband amplifiers and oscillators. 2 Top view DESCRIPTION MSB003 Marking code: R1p.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1 VALUE UNIT 260 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 MBG246 400 handbook, halfpage +24 V handbook, halfpage L3 390 Ω Ptot (mW) 560 Ω 1.2 kΩ 300 240 Ω L2 680 pF 680 pF L1 75 Ω input 75 Ω output 200 680 pF DUT 100 16 Ω MEA454 0 0 50 100 150 200 Ts ( o C) L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. Fig.2 Intermodulation distortion test circuit. Fig.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 MEA419 MEA449 30 6 handbook, halfpage handbook, halfpage fT (GHz) gain (dB) 4 20 2 10 G UM I S12 I 2 0 2 10 0 0 10 20 30 I C (mA) 40 VCE = 5 V; f = 500 MHz; Tj = 25 °C. Fig.6 10 3 104 f (MHz) IC = 30 mA; VCE = 5 V; Tamb = 25 °C. Transition frequency as a function of collector current; typical values. Fig.7 MEA453 Gain as a function of frequency; typical values.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 MEA418 60 handbook, halfpage B S (mS) 40 F = 4.5 dB 20 4 3.5 3 0 2.5 1.9 20 40 60 0 20 40 60 80 100 120 G S (mS) IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.10 Circles of constant noise figure; typical values.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 1 handbook, full pagewidth 0.5 2 0.2 5 10 1000 MHz +j 0.2 0 0.5 –j 800 1 500 2 5 ∞ 10 200 10 5 0.2 2 0.5 MEA420 1 IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C. Fig.11 Common emitter input reflection coefficient (S11); typical values.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 90 o handbook, full pagewidth 60 o 120 o 1000 MHz 150 o 30 o 800 500 200 ϕ 0.20 0.10 180 o 0o ϕ 30 o 150 o 60 o 120 o 90 o MEA423 IC = 30 mA; VCE = 5 V; Tamb = 25 °C. Fig.13 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 ∞ 10 800 –j 500 10 1000 MHz 200 5 0.2 2 0.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 NOTES 1997 Oct 29 11
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