Datasheet

2004 Feb 16 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BCX71 series
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= −45 V − − −20 nA
I
E
= 0; V
CB
= −45 V; T
amb
= 150 °C − − −20 μA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= −4 V − − −20 nA
h
FE
DC current gain I
C
= −10 μA; V
CE
= −5 V
BCX71H 30 − −
BCX71J 40 − −
BCX71K 100 − −
DC current gain I
C
= −2 mA; V
CE
= −5 V
BCX71H 180 − 310
BCX71J 250 − 460
BCX71K 380 − 630
DC current gain I
C
= −50 mA; V
CE
= −1 V; note 1
BCX71H 80 − −
BCX71J 100 − −
BCX71K 110 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.25 mA −60 − −250 mV
I
C
= −50 mA; I
B
= −1.25 mA; note 1 −120 − −550 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.25 mA −600 − −850 mV
I
C
= −50 mA; I
B
= −1.25 mA; note 1 −680 − −1 050 mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −650 −750 mV
I
C
= −10 μA; V
CE
= −5 V − −550 − mV
I
C
= −50 mA; V
CE
= −1 V; note 1 − −720 − mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V; f = 1 MHz − 4.5 − pF
C
e
emitter capacitance I
C
= I
c
= 0; V
EB
= −0.5 V; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− 2 6 dB