Datasheet

2004 Jan 16 4
NXP Semiconductors Product data sheet
NPN general purpose transistors BCX70 series
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 45 V − − 20 nA
I
E
= 0; V
CB
= 45 V; T
amb
= 150 °C − − 20 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 4 V − − 20 nA
h
FE
DC current gain I
C
= 10 μA; V
CE
= 5 V
BCX70G − − −
BCX70H 40 − −
BCX70J 30 − −
BCX70K 100 − −
DC current gain I
C
= 2 mA; V
CE
= 5 V
BCX70G 120 − 220
BCX70H 180 − 310
BCX70J 250 − 460
BCX70K 380 − 630
DC current gain I
C
= 50 mA; V
CE
= 1 V
BCX70G 50 − −
BCX70H 70 − −
BCX70J 90 − −
BCX70K 100 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.25 mA 50 − 350 mV
I
C
= 50 mA; I
B
= 1.25 mA 100 − 550 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.25 mA 600 − 850 mV
I
C
= 50 mA; I
B
= 1.25 mA 700 − 1 050 mV
V
BE
base-emitter voltage I
C
= 10 μA; V
CE
= 5 V − 520 − mV
I
C
= 2 mA; V
CE
= 5 V 550 650 750 mV
I
C
= 50 mA; V
CE
= 1 V − 780 − mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 1.7 − pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz;
note
1
100 250 − MHz
F noise figure I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− 2 6 dB