Datasheet

2001 Oct 10 4
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=30V −−100 nA
I
E
= 0; V
CB
= 30 V; T
j
= 125 °C −−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5V −−100 nA
h
FE
DC current gain V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA 63 −−
I
C
= 150 mA 63 − 250
I
C
= 500 mA 40 −−
DC current gain I
C
= 150 mA; V
CE
= 2 V; (see Fig.2)
BCX54-10; 55-10; 56-10 63 − 160
BCX54-16; 55-16; 56-16 100 − 250
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
=50mA −−0.5 V
V
BE
base-emitter voltage I
C
= 500 mA; V
CE
=2V −−1V
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz − 130 − MHz
DC current gain ratio of the
complementary pairs
I
C
 = 150 mA; V
CE
 =2V − 1.3 1.6
h
FE1
h
FE2
-----------
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH729
10
−1
h
FE
1
I
C
(mA)
10 10
3
10
2
V
CE
= 2 V